Multi-resistance-state resistance random access memory and method for implementing multiple resistance states utilizing same



The invention relates to the technical field of semiconductor manufacturing, and discloses a multi-resistance-state resistance random access memory. The memory comprises a top electrode, a resistance change layer and a bottom electrode from top to bottom, wherein the resistance change layer is an oxide. The invention also provides a method for implementing multiple resistance states by utilizing the memory. The multi-resistance-state resistance random access memory provided by the invention is a device in an MIM (metal-insulator-metal) structure based on a SiO2 material. Under an appropriate operation method, the device can generate multi-stage resistance states, multi-bit memory can be realized in a unit, and the memory density of the memory can be improved; and the material based on SiO2 is adopted for the resistance change layer of the multi-resistance-state resistance random access memory, the memory and the method provided by the invention have the advantages of simple technology and good processing compatibility with the CMOS (complementary metal-oxide-semiconductor transistor) technology.




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Patent Citations (3)

    Publication numberPublication dateAssigneeTitle
    CN-101414658-AApril 22, 2009中国科学院微电子研究所Solid-state electrolytic solution resistance change memory and preparation method thereof
    CN-101577142-ANovember 11, 2009旺宏电子股份有限公司Multi-level resistance ram and methods for operating the same
    JP-2011091325-AMay 06, 2011Sony Corp, ソニー株式会社記憶装置及びその製造方法

NO-Patent Citations (1)

    B. CHEN ET AL.: "《A Novel Operation Scheme for Oxide-Based Resistive-Switching Memory Devices to Achieve Controlled Switching Behaviors》", 《IEEE ELECTRON DEVICE LETTERS》, vol. 32, no. 3, 31 March 2011 (2011-03-31), XP011348612, DOI: doi:10.1109/LED.2010.2101577

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