Multi-resistance-state resistance random access memory and method for implementing multiple resistance states utilizing same

多阻态阻变存储器及利用其实现多阻态的方法

Abstract

本发明涉及半导体制造技术领域,公开了一种多阻态阻变存储器,自上而下包括:顶电极、阻变层和底电极,其中所述阻变层为氧化物。本发明还提供了一种利用上述存储器实现多阻态的方法。本发明多阻态阻变存储器是一种基于SiO2材料的MIM结构的器件,在适当的操作方法下该器件可以产生多级电阻态,能够在一个单元内实现多位存储,且能提高存储器的存储密度。多阻态阻变存储器的阻变层采用基于SiO2的材料,具有工艺简单,与CMOS工艺兼容性好的优点。
The invention relates to the technical field of semiconductor manufacturing, and discloses a multi-resistance-state resistance random access memory. The memory comprises a top electrode, a resistance change layer and a bottom electrode from top to bottom, wherein the resistance change layer is an oxide. The invention also provides a method for implementing multiple resistance states by utilizing the memory. The multi-resistance-state resistance random access memory provided by the invention is a device in an MIM (metal-insulator-metal) structure based on a SiO2 material. Under an appropriate operation method, the device can generate multi-stage resistance states, multi-bit memory can be realized in a unit, and the memory density of the memory can be improved; and the material based on SiO2 is adopted for the resistance change layer of the multi-resistance-state resistance random access memory, the memory and the method provided by the invention have the advantages of simple technology and good processing compatibility with the CMOS (complementary metal-oxide-semiconductor transistor) technology.

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